Characterizations of the nonlinear optical properties for (010) and ((2)over-bar01) beta-phase gallium oxide

被引:36
作者
Chen, Hong [1 ]
Fu, Houqiang [1 ]
Huang, Xuanqi [1 ]
Montes, Jossue A. [1 ]
Yang, Tsung-Han [1 ]
Baranowski, Izak [1 ]
Zhao, Yuji [1 ]
机构
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
关键词
ABSORPTION; REFRACTION; SUSCEPTIBILITIES; BULK;
D O I
10.1364/OE.26.003938
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (beta-Ga2O3), where both (010) beta-Ga2O3 and ((2) over bar 01) beta-Ga2O3 were examined for two-photon absorption coefficient, Kerr nonlinear refractive index, and their polarization dependence. The wavelength dependence of two-photo absorption coefficient and Kerr nonlinear refractive index were also estimated by a widely used analytical model. beta-Ga2O3 exhibits a two photon absorption (TPA) coefficient of 1.2 cm/GW for (010) beta-Ga2O3 and 0.6 cm/GW for ((2) over bar 01) beta-Ga2O3. The Kerr nonlinear refractive index is -2.1 x 10-15 cm(2)/W for (010) beta-Ga2O3 and -2.9 x 10(-15) cm(2)/W for ((2) over bar 01) beta-Ga2O3. In addition, beta-Ga2O3 shows stronger in-plane nonlinear optical anisotropy on ((2) over bar 01) plane than on (010) plane. Compared with GaN, TPA coefficient of beta-Ga2O3 is 20 times smaller, and the Kerr nonlinear refractive index of beta-Ga2O3 is also found to be 4-5 times smaller. These results indicate that beta-Ga2O3 have the potential for ultra-low loss waveguides and ultra-stable resonators and integrated photonics, especially in UV and visible wavelength spectral range. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:3938 / 3946
页数:9
相关论文
共 39 条
[21]   BOND SUSCEPTIBILITIES AND IONICITIES IN COMPLEX CRYSTAL-STRUCTURES [J].
LEVINE, BF .
JOURNAL OF CHEMICAL PHYSICS, 1973, 59 (03) :1463-1486
[22]   BOND-CHARGE CALCULATION OF NONLINEAR OPTICAL SUSCEPTIBILITIES FOR VARIOUS CRYSTAL-STRUCTURES [J].
LEVINE, BF .
PHYSICAL REVIEW B, 1973, 7 (06) :2600-2626
[23]   GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition [J].
Limb, J. B. ;
Yoo, D. ;
Ryou, J. H. ;
Lee, W. ;
Shen, S. C. ;
Dupuis, R. D. ;
Reed, M. L. ;
Collins, C. J. ;
Wraback, M. ;
Hanser, D. ;
Preble, E. ;
Williams, N. M. ;
Evans, K. .
APPLIED PHYSICS LETTERS, 2006, 89 (01)
[24]   Scaling laws of femtosecond laser pulse induced breakdown in oxide films [J].
Mero, M ;
Liu, J ;
Rudolph, W ;
Ristau, D ;
Starke, K .
PHYSICAL REVIEW B, 2005, 71 (11)
[25]   β-Ga2O3 Single Crystal as a Photoelectrode for Water Splitting [J].
Oshima, Takayoshi ;
Kaminaga, Kenichi ;
Mashiko, Hisanori ;
Mukai, Akira ;
Sasaki, Kohei ;
Masui, Takekazu ;
Kuramata, Akito ;
Yamakoshi, Shigenobu ;
Ohtomo, Akira .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (11)
[26]   Photoconductive Z-scan measurement of multiphoton absorption in GaN [J].
Pacebutas, V ;
Krotkus, A ;
Suski, T ;
Perlin, P ;
Leszczynski, M .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (11) :6930-6932
[27]   DIELECTRIC DEFINITION OF ELECTRONEGATIVITY [J].
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1968, 20 (11) :550-&
[28]   Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates [J].
Sasaki, Kohei ;
Higashiwaki, Masataka ;
Kuramata, Akito ;
Masui, Takekazu ;
Yamakoshi, Shigenobu .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) :493-495
[29]   SENSITIVE MEASUREMENT OF OPTICAL NONLINEARITIES USING A SINGLE BEAM [J].
SHEIKBAHAE, M ;
SAID, AA ;
WEI, TH ;
HAGAN, DJ ;
VANSTRYLAND, EW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (04) :760-769
[30]   DISPERSION OF BOUND ELECTRONIC NONLINEAR REFRACTION IN SOLIDS [J].
SHEIKBAHAE, M ;
HUTCHINGS, DC ;
HAGAN, DJ ;
VANSTRYLAND, EW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1296-1309