Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

被引：0

作者：

Kang, Jinfeng ^{[1
]}

Huang, Peng ^{[1
]}

Li, Haitong ^{[1
]}

Gao, Bin ^{[2
]}

Zhao, Yudi ^{[1
]}

Han, Runze ^{[1
]}

Zhou, Zheng ^{[1
]}

Chen, Zhe ^{[1
]}

Liu, Chen ^{[1
]}

Liu, Lifeng ^{[1
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide-based resistive random access memory (RRAM) has been widely studied as the promising candidate for the applications of next generations of data storage and computing technologies. In this paper, we will discuss the physical mechanism and optimization design of oxide-based RRAM devices, the novel RRAM-based computing/memory unifying architectures and the applications for data storage and computing technologies.

引用

页码：190 / 193

页数：4

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