Design and Simulation of Si/SiC Quantum Dot Superlattice Solar Cells with Al2O3 Passivation Layer

被引：0

作者：

Tsai, Yi-Chia ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Li, Yiming ^{[1
]}

Samukawa, Seiji ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Dept Elect & Comp Engn, Parallel & Sci Comp Lab, Hsinchu 300, Taiwan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

2017 IEEE 17TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2017年

关键词：

Minibands; Density of States; Superlattice; Si/SiC Quantum dot; Solar cell; Layer distance; Conversion efficiency; Multilayer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By simultaneously considering the enhancement of quantum confinement on the effective bandgap and minimum transition energy, the silicon (Si)! silicon carbide (SiC) quantum dot superlattice (SiC-QDSL) with aluminum oxide (A1203-QDSL) passivation layer shows the high short-circuit current (J,) of 4.77 mA/cm(2) in theoretical, which agrees with the J, of 4.75 mA/cm(2) obtained in the experiment under an AM1.5 and one sun illumination. Moreover, the reduction of efficiency in an ultra-dense QD configuration can be ameliorated by exploiting the Al2O3 passivation layer. As the result, a high conversion efficiency of 16.3% is optimized by using the QD geometry from experiment and an inter-dot spacing of 0.3 nm.

引用

页码：341 / 344

页数：4

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