Multi-wall channel transistor for p-type metal oxide semiconductor field-effect transistor performance improvement

We demonstrate the enhanced hole mobility of p-channel metal oxide semiconductor field effect transistors (PMOSFETs) using a multi-wall structural channel. Multi-wall channels with a height of 35 nm and a width of 70 nm were prepared at 70-nm half-pitches. The multi-wall channel structure produces a (I 10) surface channel and a strain produced by polycrystalline silicon (poly-Si) gates. These enhance hole mobilities. The degree of enhancement depends on the wall height. We obtained a 45% increase in hole mobility with a 35-nm-high wall at 0.8 MV/cm.