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Efficient Modulation of 1.55 μm Radiation with Gated Graphene on a Silicon Microring Resonator
被引:134
作者:
Qiu, Ciyuan
[1
,3
]
Gao, Weilu
[1
,3
]
Vajtai, Robert
[2
]
Ajayan, Pulickel M.
[2
]
Kono, Junichiro
[1
,2
,3
]
Xu, Qianfan
[1
]
机构:
[1] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA
[2] Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
[3] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
基金:
美国国家科学基金会;
关键词:
Graphene photonics;
NIR modulator;
silicon microring resonator;
high on/off ratio;
ELECTRICAL CONTROL;
CAVITY;
FILTER;
LOGIC;
D O I:
10.1021/nl502363u
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The gate-controllability of the Fermi-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation in the telecommunication band. However, a high modulation efficiency has not been demonstrated to date, because of the small amount of light absorption in graphene. Here, we demonstrate a ∼40% amplitude modulation of 1.55 μm radiation with gated single-layer graphene that is coupled with a silicon microring resonator. Both the quality factor and resonance wavelength of the silicon microring resonator were strongly modulated through gate tuning of the Fermi level in graphene. These results promise an efficient electro-optic modulator, ideal for applications in large-scale on-chip optical interconnects that are compatible with complementary metal-oxide-semiconductor technology. © 2014 American Chemical Society.
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页码:6811 / 6815
页数:5
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