Carrier localization in codoped ZnO:N:Al films

被引：15

作者：

He, H. P. ^{[1
]}

Ye, Z. Z.

Zhuge, F.

Zeng, Y. J.

Zhu, L. P.

Zhao, B. H.

Huang, J. Y.

Chen, Z.

机构：

[1] Zhejiang Univ, State Ke Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Univ Sci & Technol China, Dept Mat Sci & Engn, Anhua 230026, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2006年 / 138卷 / 10-11期

基金：

中国国家自然科学基金;

关键词：

ZnO film; codoping; photoluminescence;

D O I：

10.1016/j.ssc.2006.04.014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Temperature-dependent photoluminescence (PL) from p-type ZnO film codoped with Al and N has been investigated. In the whole temperature range of 10-300 K, the PL was dominated by a broad emission centered at 3.05 eV. The dependencies of its peak energy on temperature and compensation indicate that this emission is due to recombination of localized carriers. We suggest that the localization is due to potential fluctuations caused by strong compensation and local compositional fluctuations of the impurities. We obtain an activation energy of similar to 69 meV from thermal quenching of the luminescence intensity and ascribe it to thermal ionization of shallow donors. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：542 / 545

页数：4

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