Experimental study of n-type porous silicon obtained under illumination

被引：4

作者：

Beghoul, M. R. ^{[1
,2
]}

Boutaoui, N. ^{[2
]}

Bouridah, H. ^{[1
,2
]}

Remmouche, R. ^{[1
,2
]}

Arada, M. H. ^{[2
]}

Haoues, H. ^{[2
]}

机构：

[1] Univ Jijel, Dept Elect, Ouled Aissa 18000, Jijel, Algeria

[2] Univ Jijel, LEM, Ouled Aissa 18000, Jijel, Algeria

来源：

OPTIK | 2018年 / 161卷

关键词：

Porous silicon; Anodization; Crystallite size; Nanocrystals; Reflectance; CURRENT-DENSITY; SOLAR-CELLS; RAMAN;

D O I：

10.1016/j.ijleo.2018.01.118

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Porous silicon (PS) has been prepared from n-type (100) silicon substrate by using electrochemical etching under He-Ne laser illumination. The PS was produced within several etching conditions. The morphological, structural and optical properties were studied by using atomic force microscopy (AFM), X-ray diffraction (XRD), Raman analysis, and reflectance measurements. Results show that the evolution of the obtained nanostructures is strongly related to anodization conditions. The optical analysis results show that a low reflectance was obtained for samples anodized by increasing current density. This is correlated to morphological results showing the strong dependence of the obtained nanoporous structure in terms of crystallites sizes and porosity, on the anodization conditions. (C) 2018 Elsevier GmbH. All rights reserved.

引用

页码：161 / 165

页数：5

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