Defect-induced color-tunable monolithic GaN-based light-emitting diodes

被引：13
作者：
Huang, Yaping [1 ,2 ,3 ]
Yun, Feng [1 ,2 ,3 ]
Li, Yufeng [1 ,2 ,3 ]
Ding, Wen [1 ,2 ,3 ]
Wang, Yue [3 ]
Wang, Hong [3 ]
Zhang, Weihan [3 ]
Zhang, Ye [3 ]
Guo, Maofeng [3 ]
Liu, Shuo [4 ]
Hou, Xun [1 ,2 ,3 ]
机构：
[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China
[4] Shaanxi Supernova Lighting Technol Co Ltd, Xian 710077, Shaanxi, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期
基金：
国家高技术研究发展计划(863计划);
关键词：
CONTACTS; ORIGIN;
D O I：
10.7567/APEX.7.102102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V-Ga) were produced during the thermal bonding process in VLED fabrication. V-Ga-related donor acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current. (C) 2014 The Japan Society of Applied Physics
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页数：4
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