Defect-induced color-tunable monolithic GaN-based light-emitting diodes

被引：13

作者：

Huang, Yaping ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Li, Yufeng ^{[1
,2
,3
]}

Ding, Wen ^{[1
,2
,3
]}

Wang, Yue ^{[3
]}

Wang, Hong ^{[3
]}

Zhang, Weihan ^{[3
]}

Zhang, Ye ^{[3
]}

Guo, Maofeng ^{[3
]}

Liu, Shuo ^{[4
]}

Hou, Xun ^{[1
,2
,3
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Shaanxi, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Shaanxi, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Shaanxi, Peoples R China

[4] Shaanxi Supernova Lighting Technol Co Ltd, Xian 710077, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

CONTACTS; ORIGIN;

D O I：

10.7567/APEX.7.102102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V-Ga) were produced during the thermal bonding process in VLED fabrication. V-Ga-related donor acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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