Phonon Focusing and Temperature Dependences of the Thermal Conductivity of Silicon Nanowires

被引:11
作者
Kuleyev, I. G. [1 ]
Kuleyev, I. I. [1 ]
Bakharev, S. M. [1 ]
机构
[1] Russian Acad Sci, Ural Branch, Inst Met Phys, Ekaterinburg 620041, Russia
关键词
BOUNDARY SCATTERING REGIME; SINGLE-CRYSTALS; CUBIC-CRYSTALS; HEAT; ANISOTROPY; TRANSPORT; DIAMOND; GE;
D O I
10.1134/S1063776114020022
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The influence of phonon focusing on the anisotropy and temperature dependences of the thermal conductivity of silicon nanowires (NWs) has been studied using the three-mode Callaway theory. The calculated temperature dependences of the thermal conductivity of silicon NWs with diameters above 50 nm agree well with experimental data in the 20-300 K range. The temperatures of transitions from the boundary-scattering to volume-relaxation mechanisms are determined. Variation of the thermal conductivity anisotropy depending on temperature is analyzed. The free paths of phonons with various polarizations in the boundary scattering regime in silicon NWs significantly differ and depend to a considerable degree on the phonon focusing. The free paths reach maxima in the directions of phonon focusing and exceed values for other oscillatory modes. However, in the isotropic medium model, the phonon free paths for various polarizations coincide and are fully determined by the geometric parameters of NWs.
引用
收藏
页码:253 / 265
页数:13
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