Modeling and Experiment Verification of Lateral Current Spreading Effect in Ridge Waveguide Electroabsorption Modulators

被引：3

作者：

Wang, Huitao ^{[1
]}

Lu, Dan ^{[1
]}

Wang, Hao ^{[1
]}

Guo, Fei ^{[1
]}

Liu, Songtao ^{[1
]}

Zhou, Daibing ^{[1
]}

Zhu, Hongliang ^{[1
]}

Wang, Wei ^{[1
]}

Huang, Yongguang ^{[1
]}

Zhang, Ruikang ^{[1
]}

Ji, Chen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Equivalent circuit; lateral current spreading; p-doping; ridge structure electroabsorption modulators (EAMs); transmission line model; LASER ARRAY MODULE; EQUIVALENT-CIRCUIT; CARRIER DIFFUSION; 1.3-MU-M;

D O I：

10.1109/TED.2015.2475375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the lateral current spreading effect and its influences on the transmission characteristics of ridge waveguide electroabsorption modulators. An RF equivalent circuit based on a transmission line model explicitly accounting for this effect is proposed. The equivalent circuit parameters in our model extracted from S-11 curve fitting are used to simulate the S-21 response (electro-optical response (E/O) response), which matches well with the measured direct S-21 small-signal modulation response. The physical significance of our model parameters can be well explained based on the secondary ion mass spectroscopy doping profiling and the simulation of the current spreading effect in our device structure.

引用

页码：3756 / 3759

页数：4