共 16 条
Effects of Annealing Time on the application of Vanadium Dioxide Films in Smart Windows
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作者:

Ji, Chunhui
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Wu, Zhiming
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Wu, Xuefei
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Feng, Haoqian
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Ma, Xueting
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China

Jiang, Yadong
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Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China
机构:
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Sch Optoelect Informat, Chengdu 610054, Peoples R China
来源:
8TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES
|
2016年
/
9686卷
关键词:
Vanadium dioxide;
Insulator-metal phase transition;
Annealing time;
Smart windows;
VO2;
THIN-FILMS;
TRANSITION;
TEMPERATURE;
D O I:
10.1117/12.2242821
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Vanadium dioxide (VO2) films have great potential applications in photoelectric switching, storage devices, terahertz modulators and smart windows, due to the abruptly insulator-metal phase transition (IMT) near room temperature. In this research, vanadium oxide films were deposited by DC reactive magnetron sputtering in different annealing time of 450 degrees C on glass substrates. As for electrical properties, the increasing of annealing time turns out sheet resistance increases at first, and then decreases in insulating phase, vice versa in metallic phase. In optical properties, the visible transmittance of VO2 films initially drops with annealing time prolonging, afterwards the transmittance slightly recovers. Differences between the electrical and optical are due to the grain size. Moreover, VO2 film annealing 15 min presents excellent visible transmittance, highly near-IR modulation efficiency (about 92% at a wavelength of 1100nm) and the lowest phase transition temperature (55.7 degrees C). This result indicates that an appropriate annealing ambient can facilitate the application of VO2 film in smart windows.
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