0.9-V CMOS cascode amplifier with body-driven gain boosting

被引:32
作者
Monsurro, Pietro [1 ]
Pennisi, Salvatore [2 ]
Scotti, Giuseppe [1 ]
Trifiletti, Alessandro [1 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Ingn Elettron, Rome, Italy
[2] Univ Catania, Dipartimento Ingn Elettr Elettron & Sistemi DIEES, Catania, Italy
关键词
low voltage; low power; gain boosting; body driven; bulk driven; CIRCUIT TECHNIQUES; DESIGN;
D O I
10.1002/cta.539
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The body-driven variant of the gain-boosting technique is here exploited to design a CMOS transconductance amplifier with minimum supply below I V. When compared with the conventional gain-boosting technique, the proposed body-driven approach reduces the minimum supply requirement by two thresholds in a rail-to-rail amplifier exploiting two complementary input stage topologies. Simulations using a 130-nm process show that a 0.9-V power supply is adequate for a single-stage rail-to-rail amplifier providing a 56-dB gain, which is 18 dB higher than that achieved by the same architecture but using the traditional cascoding approach. The main drawbacks are that the solution requires a twin-tub process and an additional bias section. Copyright (C) 2008 John Wiley & Sons, Ltd.
引用
收藏
页码:193 / 202
页数:10
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