The structural transformation and properties of spin-on poly(silsesquioxane) films by thermal curing

被引:78
作者
Liu, WC
Yang, CC
Chen, WC [1 ]
Dai, BT
Tsai, MS
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 106, Taiwan
[2] Natl Sci Council, Natl Nano Device Labs, Hsinchu 300, Taiwan
关键词
D O I
10.1016/S0022-3093(02)01373-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, the structural transformation and properties of five commercially available poly(silsesquioxanes) by, thermal curing were investigated, including poly(hydrogen silsesquioxanes) (HSQ and T12), and poly(methyl silsesquioxanes) (MSQ, T7 and T9). These materials with a different cage/network ratio and side groups (Si-H and SiCH3). The FTIR spectra show that the poly(silsesquioxane) films have different contents of the Si-O-Si cage and network structures, which significantly affects the refractive index and dielectric constant. The shifting of the. Si-O-Si. network band in the FTIR spectra can be correlated with their molecular structures. The refractive indices and dielectric constants of the studied poly(silsesquioxane) films increase with increasing the Si-O-Si network content. The retention of the Si-H or Si-CH3 side group suggests the existence of the cage structures in the poly(silsesquioxane) films. The Si-O-Si cage structure results in a larger free volume than the Si-O-Si network structure in the poly(silsesquioxane) films and thus reduces the refractive index and dielectric constant. It is supported by the porosity result. The order of the refractive index in the studied poly(silsesquioxanes) films is T12 > HSQ for the Si-H side group and T7 > T9 > MSQ with the Si-CH3 side group, which can be correlated with the Si-O-Si network content. The poly(silsesquioxane) film with the Si-CH3 side group has a lower refractive index than the Si-H side group at the same Si-O-Si network content, which is probably due to the steric hindrance effect of the CH3 group. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:233 / 240
页数:8
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