A K-BAND LOW PHASE NOISE AND LOW POWER CMOS VOLTAGE-CONTROLLED OSCILLATOR

被引：5

作者：

Tsai, Jeng-Han ^{[1
]}

Lin, Yu-Zhe ^{[1
]}

Kuo, Yin-Ting ^{[1
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Elect Engn, Taipei 10610, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 02期

关键词：

K-band; CMOS; voltage-controlled oscillator; VCO;

D O I：

10.1002/mop.30313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A K-band differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillator (VCO) is implemented in 0.18-mu m CMOS process. To accomplish high quality (Q) factor LC-tank at K-band, a slab inductor with high Q is adopted. The VCO can be tuned from 23.1 to 23.38 GHz and the core dc power consumption is 11.33 mW from 1 V power supply. The phase noise is 2109.04 dBc/Hz at 1 MHz offset, and the calculated figure of merit (FoM) is 2185.79 dBc/ Hz. At low supply voltage mode of 0.65 V, the phase noise is 2106.015 dBc/Hz at 1 MHz offset and the FoM is 2189.76 dBc/Hz. (C) 2016 Wiley Periodicals, Inc.

引用

页码：362 / 366

页数：5

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