Strain engineering of piezoelectric properties of strontium titanate thin films

被引:30
作者
Sun, F. [1 ]
Khassaf, H. [2 ,3 ]
Alpay, S. P. [1 ,2 ,3 ]
机构
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
[2] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
[3] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
关键词
BARIUM-TITANATE; PHASE-TRANSITIONS; SINGLE-CRYSTALS; BEHAVIOR; GROWTH; FERROELECTRICITY; COEFFICIENTS; PERFORMANCE; FABRICATION; RELAXATION;
D O I
10.1007/s10853-014-8316-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The in-plane and out-of-plane piezoelectric properties of (001) strontium titanate (SrTiO3, STO) epitaxial thin films on pseudo-cubic (001) substrates are computed as a function of in-plane misfit strain. A nonlinear thermodynamic model is employed, which takes into account the appropriate mechanical boundary conditions, the electromechanical coupling between the polarization and the in-plane lattice mismatch, and the self-strains of the ferroelastic and ferroelectric phase transformations. The piezoelectric behavior of epitaxial STO films is described in various strain-induced ferroelectric phase fields in a temperature range from -50 to 50 A degrees C. The calculations show that by carefully tailoring in-plane misfit strains in both tensile and compressive ranges, piezoelectric coefficients that are of the order of prototypical lead zirconate titanate and other lead-based piezoceramics can be realized. These results indicate that strain engineered STO films may be employed in a variety of sensor and actuator applications as well as surface acoustic wave devices and thin-film bulk acoustic resonators.
引用
收藏
页码:5978 / 5985
页数:8
相关论文
共 62 条
[1]  
[Anonymous], 1880, Bulletin de Mineralogie, DOI DOI 10.3406/BULMI.1880.1564
[2]  
Ballman A.A., 1967, J. Cryst. Growth, V1, P311, DOI [10.1016/0022-0248(67)90038-3, DOI 10.1016/0022-0248(67)90038-3]
[3]   Multiple relaxation mechanisms in SrTiO3/SrRuO3 heterostructures [J].
Ban, ZG ;
Alpay, SP ;
He, F ;
Wells, BO ;
Xi, XX .
APPLIED PHYSICS LETTERS, 2004, 84 (24) :4848-4850
[4]   Characterization of thick lead zirconate titanate films fabricated using a new sol gel based process [J].
Barrow, DA ;
Petroff, TE ;
Tandon, RP ;
Sayer, M .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :876-881
[5]   SR1-XCAXTIO3 - AN XY QUANTUM FERROELECTRIC WITH TRANSITION TO RANDOMNESS [J].
BEDNORZ, JG ;
MULLER, KA .
PHYSICAL REVIEW LETTERS, 1984, 52 (25) :2289-2292
[6]   Phase-field method of phase transitions/domain structures in ferroelectric thin films: A review [J].
Chen, Long-Qing .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2008, 91 (06) :1835-1844
[7]   Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications [J].
Choi, DH ;
Lee, D ;
Sim, H ;
Chang, M ;
Hwang, HS .
APPLIED PHYSICS LETTERS, 2006, 88 (08)
[8]   Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics [J].
Damjanovic, D .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (09) :1267-1324
[9]   Piezoelectric thin film micromechanical beam resonators [J].
DeVoe, DL .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 88 (03) :263-272
[10]   THEORY OF FERROELECTRICS [J].
DEVONSHIRE, AF .
ADVANCES IN PHYSICS, 1954, 3 (10) :85-130