Photoluminescence studies of SiGe quantum dot arrays prepared by templated self-assembly

被引：26
|
作者：
Dais, C. [1 ]
Mussler, G. [2 ]
Sigg, H. [1 ]
Fromherz, T. [3 ]
Auzelyte, V. [1 ]
Solak, H. H. [1 ]
Gruetzmacher, D. [2 ]
机构：
[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland
[2] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany
[3] Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-8093 Linz, Austria
来源：
EPL | 2008年 / 84卷 / 06期
关键词：
D O I：
10.1209/0295-5075/84/67017
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photoluminescence emission of SiGe quantum dot arrays prepared by templated self-assembly, combining extreme-ultraviolet interference lithography and molecular beam epitaxy, were studied. The PL spectra obtained from areas with ordered dots show a pronounced SiGe-quantum-dot-related signal. The corresponding no-phonon and assisted transversal optical phonon recombinations are well resolved due to the narrow-size distribution of the fabricated quantum dot arrays. Additionally, the dependence of the photoluminescence emission on dot size and Ge concentration is discussed as well as effects of laser power excitation. Copyright (C) EPLA, 2008
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页数：5
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