Effect of Microwave Annealing on Oxide-Semiconductor-Precursor Ink

被引：7

作者：

Cheong, Hea Jeong ^{[1
]}

Fukuda, Nobuko ^{[1
]}

Ogura, Shintaro ^{[1
]}

Sakai, Heisuke ^{[1
]}

Manabu, Yoshida ^{[1
]}

Kodzasa, Takehito ^{[1
]}

Tokuhisa, Hideo ^{[1
]}

Tokoro, Kazuhiko ^{[1
]}

Takeuchi, Kazuhiko ^{[2
]}

Nagahata, Ritsuko ^{[2
]}

Nakamura, Takashi ^{[3
]}

Uemura, Sei ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr FLEC, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Inst Adv Ind Sci & Technol, NRI, Tsukuba, Ibaraki 3058565, Japan

[3] Natl Inst Adv Ind Sci & Technol, Res Ctr Compact Chem Syst CCS, Sendai, Miyagi 9838551, Japan

来源：

关键词：

Microwave annealing; Indium gallium zinc oxide (IGZO) precursor; Ink; XRD; THIN-FILM TRANSISTORS; TEMPERATURE;

D O I：

10.2494/photopolymer.27.339

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

[No abstract available]

引用

页码：339 / 342

页数：4