An equilibrium model for buried SiGe strained layers

被引：13

作者：

Fischer, A ^{[1
]}

Osten, HJ ^{[1
]}

Richter, H ^{[1
]}

机构：

[1] IHP, Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 05期

关键词：

SiGe heteroepitaxy; strained layer; equilibrium theory; critical thickness;

D O I：

10.1016/S0038-1101(99)00284-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The more refined model proposed here and its experimental verification provides a consistent picture of the complex mechanism for strain relief and defect propagation in Si/SiGe/Si heteroepitaxial stacks used in HBT technology. We have identified and quantified the relevant phenomena to predict the coherency and relaxation behavior of more complicated heteroepitaxial structures and can precisely predict the equilibrium critical thickness for a defect-free Si capped SiGe epilayer on Si substrate. The results allow us to optimize the device design for high con strained layer configurations and to determine the latitude in process margin. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：869 / 873

页数：5

共 22 条

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].