Inverted Pyramid Defects in 4H-SiC Epilayers

被引：1

作者：

Shrivastava, A. ^{[1
]}

Muzykov, P. ^{[1
]}

Sudarshan, T. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

inverted pyramid; KOH; AFM; BPD;

D O I：

10.4028/www.scientific.net/MSF.615-617.125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the < 11-20 > directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.

引用

页码：125 / 128

页数：4

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