The synthesis of aligned silicon nanowires under ambient atmospheric pressure

被引：1
作者：
Wan, Shanhong [1 ,2 ]
Yu, Yuanlie [1 ,2 ]
Zhang, Junyan [1 ]
机构：
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2009年 / 355卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Amorphous semiconductors; III-V Semiconductors; Silicon; Catalysis; GROWTH;
D O I：
10.1016/j.jnoncrysol.2009.01.012
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Highly ordered amorphous silicon nanowires were successfully synthesized from single crystalline silicon wafer at the pyrolysis temperature of 1050 degrees C under ambient atmospheric pressure. Both poly (phenylcarbyne) and nickel nitrate played important roles in the growth of silicon nanowires. The fabrication of ordered silicon nanowires was controllable and repeatable, confirmed by the experimental results. The morphology and microstructure analysis of the as-obtained samples showed the highly ordered amorphous silicon nanowires were obtained, determined by scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and FT-infrared spectroscopy. A solid-liquid-solid growing process was proposed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：518 / 520
页数：3
相关论文
共 16 条
[1]   Silicon nanowires grown on Si(100) substrates via thermal reactions with carbon nanoparticles [J].
Botti, S ;
Ciardi, R ;
Larciprete, R ;
Goldoni, A ;
Gregoratti, L ;
Kaulich, B ;
Kiskinova, M .
CHEMICAL PHYSICS LETTERS, 2003, 371 (3-4) :394-400
[2]   Rational growth of highly oriented amorphous silicon nanowire films [J].
Chen, XH ;
Xing, YJ ;
Xu, J ;
Xiang, J ;
Yu, DP .
CHEMICAL PHYSICS LETTERS, 2003, 374 (5-6) :626-630
[3]   Silicon nanowire and polyethylene superhydrophobic surfaces for discrete magnetic microfluidics [J].
Egatz-Gomez, Ana ;
Schneider, John ;
Aella, P. ;
Yang, Dongqing ;
Dominguez-Garcia, P. ;
Lindsay, Solitaire ;
Picraux, S. T. ;
Rubio, Miguel A. ;
Melle, Sonia ;
Marquez, Manuel ;
Garcia, Antonio A. .
APPLIED SURFACE SCIENCE, 2007, 254 (01) :330-334
[4]   Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam [J].
Fukata, N ;
Oshima, T ;
Tsurui, T ;
Ito, S ;
Murakami, K .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2005, 6 (06) :628-632
[5]   Direct ultrasensitive electrical detection of DNA and DNA sequence variations using nanowire nanosensors [J].
Hahm, J ;
Lieber, CM .
NANO LETTERS, 2004, 4 (01) :51-54
[6]   Logic gates and computation from assembled nanowire building blocks [J].
Huang, Y ;
Duan, XF ;
Cui, Y ;
Lauhon, LJ ;
Kim, KH ;
Lieber, CM .
SCIENCE, 2001, 294 (5545) :1313-1317
[7]   QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA [J].
KIRK, CT .
PHYSICAL REVIEW B, 1988, 38 (02) :1255-1273
[8]   VIBRATIONAL PROPERTIES OF GLASSES - INTERMEDIATE RANGE ORDER [J].
LUCOVSKY, G ;
WONG, CK ;
POLLARD, WB .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :839-846
[9]   Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs [J].
Marchi, A ;
Gnani, E ;
Reggiani, S ;
Rudan, M ;
Baccarani, G .
SOLID-STATE ELECTRONICS, 2006, 50 (01) :78-85
[10]   A laser ablation method for the synthesis of crystalline semiconductor nanowires [J].
Morales, AM ;
Lieber, CM .
SCIENCE, 1998, 279 (5348) :208-211
12