Highly Transparent, High-Performance IGZO-TFTs Using the Selective Formation of IGZO Source and Drain Electrodes

被引：21

作者：

Wu, Hung-Chi ^{[1
,2
]}

Chien, Chao-Hsin ^{[3
,4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[4] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 06期

关键词：

RTA; self-aligned; IGZO; TFT; THIN-FILM-TRANSISTOR; OXIDE;

D O I：

10.1109/LED.2014.2317943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, high-performance, highly transparent amorphous InGaZnO (IGZO) thin-film transistors (TFTs) with IGZO source/drain electrodes were fabricated. Rapid thermal annealing treatment effectively converted IGZO from a semiconductor into a conductor. Using a patterned SiO2 capping layer, highly transparent IGZO-TFTs with selectively formed IGZO electrodes were fabricated on a glass substrate. The mobility of the fabricated IGZO-TFT was 8.3 cm(2)/V s, ON/OFF ratio was 3.1 x 10(6), and subthreshold swing was 0.44 V/decade. Thus, the proposed scheme provides a simple and practical method of fabricating high-performance, highly transparent IGZO TFTs.

引用

页码：645 / 647

页数：3

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