Electronic structure of bulk and defect α- and γ-Al2O3

被引：17

作者：

Perevalov, T. V. ^{[1
]}

Shaposhnikov, A. V. ^{[1
]}

Gritsenko, V. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Alumina; High-k; Defect;

D O I：

10.1016/j.mee.2009.03.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electronic structure of bulk and oxygen vacancies of high-k dielectric Al2O3 (alpha- and gamma- phases) was calculated from the first principles. It was found, that oxygen vacancy can be both electron and hole trap in alpha- and gamma-Al2O3. High leakage current trough thin films of Al2O3 can be caused by oxygen vacancies. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1915 / 1917

页数：3

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