Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO2

被引：0

作者：

Kolomiiets, Nadiia M. ^{[1
]}

Afanas'ev, Valery V. ^{[1
]}

Madia, Oreste ^{[1
]}

Cott, Daire J. ^{[2
]}

Collaert, Nadine ^{[2
]}

Thean, Aaron ^{[2
,3
]}

Stesmans, Andre ^{[1
]}

机构：

[1] Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[3] Natl Univ Singapore, Singapore, Singapore

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 10-12 | 2016年 / 13卷 / 10-12期

关键词：

internal photoemission; interface barrier; dipole;

D O I：

10.1002/pssc.201600105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By analyzing internal photoemission of electrons from Si/SiOx-passivated Ge into insulating HfO2 we found that insertion of additional La interlayer between SiOx and HfO2 leads to dramatic increase (more than by factor of 20) of the barrier transparency. However, no measurable variation of the interface barrier height is observed suggesting that La induces intermixing of near-interface oxide stack resulting in development of additional density of states corresponding to conduction band of LaOx and HfOx sub-networks. At the same time, photoemission results indicate the presence of discrete positive charges in the near-interface oxide layer which may explain the observed similar to 1 V shift of capacitance-voltage curves. c 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：855 / 859

页数：5

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