Low Noise and Fast Photoresponse of Few-Layered MoS2 Passivated by MA3Bi2Br9

被引：44
作者：
He, Jungang
Yang, Ying
He, Yi
Ge, Cong
Zhao, Yang
Gao, Liang [1 ]
Tang, Jiang [1 ]
机构：
[1] Huazhong Univ Sci & Technol, WNLO, Wuhan 430074, Hubei, Peoples R China
来源：
ACS PHOTONICS | 2018年 / 5卷 / 05期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
MoS2; MA(3)Bi(2)Br(9); passivation; photodetector; DEFECTS; PHOTODETECTOR; TRANSISTORS;
D O I：
10.1021/acsphotonics.8b00129
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have been widely used in electronic and optoelectronic devices. However, 2D TMDs suffer from surface defects and ambient gas absorption, which significantly degrade their electronic and optoelectronic properties. Here we revealed the passivation effect of methylamine (MA) halide on molybdenum disulfide (MoS2) in the outstanding lead-based/MoS2 hybrid structure. Lead-free MA(3)Bi(2)Br(9) with a high-crystalline quasi-layered structure was used to prolong the MABr passivation effect on MoS2. As a result, MA(3)Bi(2)Br(9)-coated MoS2 photodetector achieved the fastest response time of 0.3 ms and the highest detectivity of 3.8 X 10(12) Jones among the reported MoS2-based photodetectors so far. This photodetector also showed high photoresponse stability.
引用
收藏
页码：1877 / 1884
页数：15
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