Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

被引：19

作者：

Nakajima, A ^{[1
]}

Ito, Y ^{[1
]}

Yokoyama, S ^{[1
]}

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Hiroshima 7398527, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 04期

关键词：

D O I：

10.1063/1.1492318

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current-voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length. (C) 2002 American Institute of Physics.

引用

页码：733 / 735

页数：3

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