Nanoscratch-induced deformation of single crystal silicon

被引：54

作者：

Wu, Y. Q. ^{[1
]}

Huang, H. ^{[1
]}

Zou, J. ^{[1
,2
]}

Dell, J. M. ^{[3
]}

机构：

[1] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[3] Univ Western Australia, Sch Elect Elect & Comp Engn, Perth, WA 6009, Australia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 03期

关键词：

amorphisation; deformation; dislocation nucleation; elemental semiconductors; grinding; indentation; silicon; stacking faults; transmission electron microscopy; twin boundaries; TRANSMISSION ELECTRON-MICROSCOPY; MONOCRYSTALLINE SILICON; INDENTATION; MICROSTRUCTURE; BEHAVIOR;

D O I：

10.1116/1.3049517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nanoscratching-induced deformation of monocrystalline Si has been investigated using transmission electron microscopy (TEM). The results indicate that amorphization and formation of crystalline defects are two dominant phenomena associated with the scratching processes. TEM analyses reveal that amorphization occurs at extremely small scratching loads. Stacking faults and twins are nucleated at a smaller load than that for dislocation. Dislocations start to nucleate along Si {111} planes when the normal scratching load is greater than a threshold value and penetrate deeper into the Si subsurface with the increasing load. Both normal load and tip radius have significant influence on the deformation, which are somehow different from those associated with nanoindentation and nanogrinding.

引用

页码：1374 / 1377

页数：4

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