Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

被引：42

作者：

Hofmann, T. ^{[1
]}

Chavdarov, T. ^{[1
]}

Darakchieva, V. ^{[2
]}

Lu, H. ^{[3
]}

Schaff, W. J. ^{[3
]}

Schubert, M. ^{[4
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[2] Linkoping Univ, Dept Phys & Measurement Technol, SW-58183 Linkoping, Sweden

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[4] Univ Nebraska Licoln, Dept Elect Engn & Ctr Mat Res & Anal CMRA, Lincoln, NE USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565467

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 X 10(17) cm(-3) to 9.5 X 10(18) cm(-3) using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Gamma-point we estimate m(perpendicular to)* = 0.047mo and m(parallel to)* = 0.039mo; for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm(2)/(VS) to 800 cm(2)/(VS) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1854 / 1857

页数：4

共 13 条

[11] Band parameters for nitrogen-containing semiconductors [J].

Vurgaftman, I ;

Meyer, JR .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :3675-3696

[12] Effects of the narrow band gap on the properties of InN [J].

Wu, J ;

Walukiewicz, W ;

Shan, W ;

Yu, KM ;

Ager, JW ;

Haller, EE ;

Lu, H ;

Schaff, WJ .

PHYSICAL REVIEW B, 2002, 66 (20)

[13]

Yu P. Y., 1999, FUNDAMENTALS SEMICON

← 1 2 →