Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells

被引：5

作者：

Shibata, K. ^{[1
,2
]}

Karalic, M. ^{[1
]}

Mittag, C. ^{[1
]}

Tschirky, T. ^{[1
]}

Reichl, C. ^{[1
]}

Ito, H. ^{[2
]}

Hashimoto, K. ^{[3
,4
]}

Tomimatsu, T. ^{[3
]}

Hirayama, Y. ^{[3
,4
,5
]}

Wegscheider, W. ^{[1
]}

Ihn, T. ^{[1
]}

Ensslin, K. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Tohoku Inst Technol, Sendai, Miyagi 9828577, Japan

[3] Tohoku Univ, Grad Sch Sci, Sendai, Miyagi 9808578, Japan

[4] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[5] Tohoku Univ, Ctr Sci & Innovat Spintron, Core Res Cluster, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 23期

关键词：

MOBILITY; ANTIMONIDE;

D O I：

10.1063/1.5093133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured hole transport in electrically induced two-dimensional hole gases in undoped GaSb/AlSb quantum wells. In order to access the electrically induced two-dimensional hole gas in GaSb quantum wells, recessed ohmic contacts were formed and the low-temperature magnetoresistance was measured for a gate-defined Hall bar geometry. The mobility of the sample increases with increasing hole density and reaches 20000cm(2)/Vs at a hole density of 5.3x10(11)cm(-2) for an 8-nm-thick GaSb quantum well. The longitudinal and Hall resistivities show Shubnikov-de Haas oscillations and integer quantum Hall plateaus, respectively. These results establish a platform for realizing spin-based electronics using the strong spin-orbit interaction of this material and are also useful for understanding the transport properties of the two-dimensional topological insulator realized in InAs/GaSb double quantum well structures.

引用

页数：4

共 34 条

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