Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides
被引:78
作者:
Berkelbach, Timothy C.
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机构:
Univ Chicago, Dept Chem, Chicago, IL 60637 USA
Univ Chicago, James Franck Inst, Chicago, IL 60637 USAUniv Chicago, Dept Chem, Chicago, IL 60637 USA
Berkelbach, Timothy C.
[1
,2
]
Reichman, David R.
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机构:
Columbia Univ, Dept Chem, New York, NY 10027 USAUniv Chicago, Dept Chem, Chicago, IL 60637 USA
Reichman, David R.
[3
]
机构:
[1] Univ Chicago, Dept Chem, Chicago, IL 60637 USA
[2] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
[3] Columbia Univ, Dept Chem, New York, NY 10027 USA
Starting with the isolation of a single sheet of graphene, the study of layered materials has been one of the most active areas of condensed matter physics, chemistry, and materials science. Single-layer transition-metal dichalcogenides are direct-gap semiconducting analogs of graphene that exhibit novel electronic and optical properties. These features provide exciting opportunities for the discovery of both new fundamental physical phenomena as well as innovative device platforms. Here, we review the progress associated with the creation and use of a simple microscopic framework for describing the optical and excitonic behavior of few-layer transitionmetal dichalcogenides, which is based on symmetry, band structure, and the effective interactions between charge carriers in these materials. This approach provides an often quantitative account of experiments that probe the physics associated with strong electron-hole interactions in these quasi twodimensional systems and has been successfully employed by many groups to both describe and predict emergent excitonic behavior in these layered semiconducting systems.
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页码:379 / 396
页数:18
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AJAYI OA, 2017, 2D MATER, V4, DOI DOI 10.1088/2053-1583/AA6AA1