Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification

被引：8

作者：

Huang, Feng ^{[1
,2
]}

Chen, Ruirun ^{[1
]}

Guo, Jingjie ^{[1
]}

Ding, Hongsheng ^{[1
]}

Su, Yanqing ^{[1
]}

Yang, Jieren ^{[1
]}

Fu, Hengzhi ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] Wuhan Univ Technol, Sch Automot Engn, Hubei Key Lab Adv Technol Automobile Parts, Wuhan, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 23卷

基金：

中国国家自然科学基金;

关键词：

Electrical resistivity; Silicon ingot; Cold crucible; Directional solidification; MULTICRYSTALLINE SILICON; IMPROVEMENT; IMPURITIES;

D O I：

10.1016/j.mssp.2014.02.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A multicrystalline silicon ingot was grown by cold crucible continuous melting and directional solidification. The electrical resistivity, shallow level impurities' concentrations and microstructure of the ingot were measured, and their relationships were studied and discussed. The results show that in the vertical direction the electrical resistivity gets its maximum value at the height of 90 mm and then decreases toward both sides. In the horizontal direction, it is distributed uniformly in the inner area and increases slightly in the peripheral area. The electrical resistivity of the silicon ingot is affected by its shallow level impurities' concentrations and its microstructure. Among these impurities the effect of Al is less than those of B and P, since Al tends to form complex precipitates with other elements. Crown Copyright (C) 2014 Published by Elsevier Ltd. All rights reserved.

引用

页码：14 / 19

页数：6

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