The split-off terahertz radiating dipoles on thermally reduced α-V2O5 (001) surface

被引:6
作者
Wang, Q. J. [1 ]
Wang, H. [1 ]
Zhou, Z. H. [1 ]
Zuo, J. [1 ]
Zhang, C. L. [1 ]
机构
[1] Capital Normal Univ, Dept Phys, Key Lab Terahertz Optoelect, Beijing 100048, Peoples R China
关键词
V2O5; THIN-FILMS; OPTICAL-PROPERTIES; CRYSTALLINE; OXIDE; THZ;
D O I
10.1039/d0nr03889j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The trapped electron states on a pliable lattice have different localization and physical chemistry characteristics. Here, terahertz time-domain measurements suggest that the formation of vanadyl oxygen defect, in the presence of the surface potential traps and mobile charge carriers, leads to a transient charge distribution that forms terahertz radiating dipoles in V2O5. The emergence of radiating dipoles is evidenced by terahertz responses with a two-valley feature of the thermally reduced alpha-V2O5 (001) thin films in the temperature range of 300-700 K. The two photoconductance valleys on a several millielectron volts interval are related to two emergent split-off traps, which originate from the VO6 octahedra distortion upon the vanadyl oxygen desorption on the surface. The pliable surface lattices plays a decisive role. So long as the alpha-V2O5 (001) thin films are covered by a 30 nm-thick Al2O3 capping layer, the distinct two-valley feature disappears completely in the full temperature range. The terahertz radiating dipoles with a fine energy structure is potentially a new measure for charge dynamics on the alpha-V2O5 (001) surface.
引用
收藏
页码:21368 / 21375
页数:8
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