Robust room temperature persistent photoconductivity in polycrystalline indium oxide films

被引：33

作者：

Dixit, A. ^{[1
]}

Panguluri, Raghava P. ^{[1
]}

Sudakar, C. ^{[1
]}

Kharel, P. ^{[1
]}

Thapa, P. ^{[1
]}

Avrutsky, I. ^{[1
,2
]}

Naik, R. ^{[1
]}

Lawes, G. ^{[1
]}

Nadgorny, B. ^{[1
]}

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 25期

基金：

美国国家科学基金会;

关键词：

carrier density; indium compounds; photoconductivity; semiconductor materials; semiconductor thin films; ultraviolet radiation effects; ultraviolet spectra; visible spectra; ELECTRICAL-PROPERTIES; RELAXATION;

D O I：

10.1063/1.3159623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of UV irradiation on the electrical and optical properties of polycrystalline In2O3 films. We found that UV illumination at a peak wavelength of 365 nm leads to a sharp drop in resistance and increase in carrier concentration. This highly conductive state persists for a timescale of hours in air at room temperature after illumination. We observe distinct changes in the optical absorption spectra and the associated change in carrier concentration, which is consistent with a Burstein-Moss shift of similar to 0.1 eV. The relaxation rate of this persistent conducting state depends strongly on temperature. We find that the conductance relaxation in an oxygen-free environment can be described by a stretched exponential while the behavior of the samples in air is better described by a logarithmic relaxation, both of which may be associated with glassy behavior.

引用

页数：3

共 19 条

[1] Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Gao, XD ;

Yu, WD ;

Chen, LD .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543

[2] Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy [J].

Bourlange, A. ;

Payne, D. J. ;

Egdell, R. G. ;

Foord, J. S. ;

Edwards, P. P. ;

Jones, M. O. ;

Schertel, A. ;

Dobson, P. J. ;

Hutchison, J. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4] Band structure of indium oxide: Indirect versus direct band gap [J].

Erhart, Paul ;

Klein, Andreas ;

Egdell, Russell G. ;

Albe, Karsten .

PHYSICAL REVIEW B, 2007, 75 (15)

[5] Indium-oxide polymorphs from first principles: Quasiparticle electronic states [J].

Fuchs, F. ;

Bechstedt, F. .

PHYSICAL REVIEW B, 2008, 77 (15)

[6] BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3 [J].

HAMBERG, I ;

GRANQVIST, CG ;

BERGGREN, KF ;

SERNELIUS, BE ;

ENGSTROM, L .

PHYSICAL REVIEW B, 1984, 30 (06) :3240-3249

[7]

HARTNAGEL H., 1995, Semiconducting Transparent Thin Films

[8] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

KAKALIOS, J ;

STREET, RA ;

JACKSON, WB .

PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040

[9]

Kiriakidis G, 2001, PHYS STATUS SOLIDI A, V185, P27, DOI 10.1002/1521-396X(200105)185:1<27::AID-PSSA27>3.0.CO

[10]

2-U

← 1 2 →