The effects of the ageing on the characteristic parameters of polyaniline/p-type Si/Al structure

被引：25

作者：

Saglam, M ^{[1
]}

Biber, M

Çakar, M

Türüt, A

机构：

[1] Ataturk Univ, Dept Phys, Fac Sci & Arts, TR-25240 Erzurum, Turkey

[2] Sutcu Imam Univ, Fac Sci & Arts, Dept Chem, K Maras, Turkey

来源：

APPLIED SURFACE SCIENCE | 2004年 / 230卷 / 1-4期

关键词：

D O I：

10.1016/j.apsusc.2004.03.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A detailed study of the effects of the ageing on the characteristic parameters of polyaniline/p-type SUM structure has been presented. The polyaniline film has been formed on a p-type Si substrate by means of an anodization process. The polyaniline/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V curves studied at room temperature. The current-voltage curves of the structure have been measured immediately, 15, 30, 60, 90 and 120 days after fabrication of the polyaniline/p-Si/Al structure. It has been seen that the characteristic parameters, such as barrier height (BH), ideality factor and series resistance of polyaniline/p-type Si/Al structure have slowly changed with increasing ageing time. The diode shows nonideal I-V behavior with an ideality factor greater than unity that can be ascribed to the interfacial layer, the interface states and the series resistance. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：404 / 410

页数：7

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