Single-phase anatase structure and dominant metallic Ge in Ge/TiO2 multi-layer films using a differential pumping co-sputtering system

被引:6
作者
Abe, Seishi [1 ]
Adachi, Yoshitaka [2 ]
Matsuda, Kenji [3 ]
Nose, Masateru [4 ]
机构
[1] Res Inst Electromagnet Mat, Sendai, Miyagi 9820807, Japan
[2] Toyama Univ, Grad Sch Sci & Engn Educ, Toyama 9308555, Japan
[3] Toyama Univ, Grad Sch Sci & Engn Res, Toyama 9308555, Japan
[4] Toyama Univ, Fac Art & Design, Takaoka, Toyama 9338588, Japan
基金
日本科学技术振兴机构;
关键词
X-ray diffraction; Transmission electron microscopy; Transmittance; Radio-frequency sputtering; X-ray photoelectron spectroscopy; Germanium; Titanium dioxide; TIO2; SEMICONDUCTOR;
D O I
10.1016/j.tsf.2014.03.080
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study investigates the preparation of Ge/TiO2 multi-layer films using a differential-pumping co-sputtering system (DPCS). This system has two chambers with different atmospheres, pure Ar for the Ge target and 0.5%O-2 in Ar for the TiO2 ceramic target. The optical absorption spectra of the multi-layer films obviously shift to visible and near-infrared regions with increasing Ge layer thickness, while keeping O/Ti composition ratios of 2.3 +/- 0.1 in TiO2. X-ray diffraction results indicate that the TiO2 layer forms a single-phase anatase structure in the multi-layer films. X-ray photoelectron spectroscopy also indicates that metallic Ge is dominant in the multi-layer film with negligible Ge-oxide. Therefore, DPCS provides a multi-layer film with a single-phase anatase structure in the TiO2 layer and a dominant metallic element in the Ge layer. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:104 / 108
页数:5
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