Influence of residual silicon and phosphorus on growth, productivity lodging and grain quality of succeeding wheat under rice-wheat cropping system

Aim: To assess the residual effect of silicon (Si) and phosphorus (P2O5) application on the growth, productivity, lodging resistance and grain quality of wheat in Indo-Gangetic Plains of India. Methodology:Afield experiment was conducted with four levels each of silicon (0, 40, 80 and 120 kg Si ha(-1)) and phosphorus (0, 30, 60 and 90 kg P2O5 hal) in a factorial randomized block design (FRBD) replicated three times at research farm of the ICAR-Indian Agricultural Research Institute, New Delhi during 2015-16 and 2016-17 to study the residual effect of Si and P2O5 on wheat. Growth, yield, yield attributes, lodging and grain quality parameters were analyzed using standard procedures. Both the nutrients were applied in aerobic rice crop and their residual effect was studied in wheat crop. Results: Application of Si and P2O5 in preceding rice crop significantly improved the growth, yield, grain quality of succeeding wheat crop. Grain yield of wheat was increased by 21% due to application of Si and P2O5. Significant improvement was observed when P2O5 and Si were applied at 60 and 80 kg ha(-1), respectively. Lodging was reduced by 100% with P2O5 and Si application at 90 and 120 kg hal, respectively. Interpretation: Application of Si and P2O5 has potential to enhance productivity by improving growth, yield attributes and reduction in a biotic stress like lodging. Fertilization with P2O5 and Si can reduce lodging and improve wheat grain quality through enhanced sturdiness and protein content.