Memristive switching of MgO based magnetic tunnel junctions

被引：65

作者：

Krzysteczko, Patryk ^{[1
]}

Reiss, Guenter ^{[1
]}

Thomas, Andy ^{[1
]}

机构：

[1] Univ Bielefeld, Thin Films & Phys Nanostruct, D-33615 Bielefeld, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

关键词：

RESISTANCE CHANGE; DATA-STORAGE; THIN; BARRIERS; FILMS;

D O I：

10.1063/1.3224193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3224193]

引用

页数：3

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