Memristive switching of MgO based magnetic tunnel junctions

被引：62
|
作者：
Krzysteczko, Patryk [1 ]
Reiss, Guenter [1 ]
Thomas, Andy [1 ]
机构：
[1] Univ Bielefeld, Thin Films & Phys Nanostruct, D-33615 Bielefeld, Germany
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期
关键词：
RESISTANCE CHANGE; DATA-STORAGE; THIN; BARRIERS; FILMS;
D O I：
10.1063/1.3224193
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3224193]
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页数：3
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