Infrared SHG Materials CsM3Se6 (M = Ga/Sn, In/Sn): Phase Matchability Controlled by Dipole Moment of the Asymmetric Building Unit

被引：92

作者：

Lin, Hua ^{[2
]}

Chen, Ling ^{[1
]}

Yu, Ju-Song ^{[2
]}

Chen, Hong ^{[2
]}

Wu, Li-Ming ^{[1
]}

机构：

[1] Beijing Normal Univ, Minist Educ, Key Lab Theoret & Computat Photochem, Beijing Key Lab Energy Convers & Storage Mat,Coll, Beijing 100875, Peoples R China

[2] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2017年 / 29卷 / 02期

关键词：

NONLINEAR-OPTICAL MATERIALS; STRONG 2ND-HARMONIC GENERATION; DAMAGE THRESHOLDS; GE; CRYSTALS; SI; PERFORMANCES; SE; SN; RB;

D O I：

10.1021/acs.chemmater.6b05026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A study presents two new phase matchable (PM) CsM3Se6 with excellent second-harmonic generation (SHG)efficiency and high laser-induced damage threshold (LIDT), distinguishing themselves as one of a few best materials. The calculated d15 are consistent with the experimental observations. The calculated birefringence agrees well with the observed phase matchability. In comparing with the NPM parent CsM3Se12, CsM3Se6 illustrates for the first time that dipole moment orientation and magnitude of the asymmetric building unit may determine the phase matchability.

引用

页码：499 / 503

页数：5

共 28 条

[1] Large optical nonlinearity of indium tin oxide in its epsilon-near-zero region [J].