Simulation of Phase Change Random Access Memory for Low Reset Current and High Thermal Efficiency by Finite Element Modeling

被引：4
作者：
Gong, Yue-feng [1 ]
Ling, Yun [1 ]
Song, Zhi-tang [1 ]
Feng, Song-lin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 06期
关键词：
DEVICE;
D O I：
10.1143/JJAP.48.064505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A refined structure, namely ring in Ge2Sb2Te5 (GST) structure (RIG) for low reset current and high thermal efficiency is proposed in this investigation. A comprehensive thermal-analysis of the phase change random access memory (PCRAM) by three-dimension finite element modeling is proposed. The effect of temperature on device cell design and optimization is investigated. This study provides an insight into the thermal issues and phenomena in the PCRAM. (C) 2009 The Japan Society of Applied Physics
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页数：4
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