Ultrafast Electron-Phonon Coupling at Metal-Dielectric Interface

被引:7
|
作者
Yao, Qiaomu [1 ]
Guo, Liang [1 ]
Iyer, Vasudevan [1 ]
Xu, Xianfan [1 ]
机构
[1] Purdue Univ, Sch Mech Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
HEAT-TRANSFER;
D O I
10.1080/01457632.2018.1457281
中图分类号
O414.1 [热力学];
学科分类号
摘要
Energy transfer from photo-excited electrons in a metal thin film to the dielectric substrate is important for understanding the ultrafast heat transfer process across the two materials. Substantial research has been conducted to investigate heat transfer in a metal-dielectric structure. In this work, a two-temperature model in metal was used to analyze the interface electron and dielectric substrate coupling. An improved temperature and wavelength-dependent Drude-Lorentz model was implemented to interpret the signals obtained in optical measurements. Ultrafast pump-and-probe measurements on Au-Si samples were carried out, where the probe photon energy was chosen to be close to the interband transition threshold of gold to minimize the influence of non-equilibrium electrons on the optical response and maximize the thermal modulation to the optical reflectance. Electron-substrate interface thermal conductance at different pump laser fluences was obtained, and was found to increase with the interface temperature.
引用
收藏
页码:1211 / 1219
页数:9
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