Stable Core/Shell CdTe/Mn-CdS Quantum Dots Sensitized Three-Dimensional, Macroporous ZnO Nanosheet Photoelectrode and Their Photoelectrochemical Properties

被引:34
作者
Li, Weili [1 ]
Sheng, Pengtao [1 ]
Feng, Hongyan [1 ]
Yin, Xuehua [1 ]
Zhu, Xuewei [1 ]
Yang, Xu [1 ]
Cai, Qingyun [1 ]
机构
[1] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemobiosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
基金
美国国家科学基金会;
关键词
SILAR; photoelectrochemical; quantum dots; macroporous ZnO nanosheet; photocatalytic degradation; SOLAR-CELLS; BAND-GAP; ARRAYS; ELECTRODEPOSITION; TRANSITION; EFFICIENCY; NETWORK; CUINS2; ENERGY; LAYER;
D O I
10.1021/am502151m
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel photoelectrode based on ZnS/CdTe/Mn-CdS/ZnS-sensitized three-dimensional macroporous ZnO nanosheet (NS) has been prepared by electrodeposition and successive ion layer adsorption and reaction (SILAR) method. The photoelectrode performances were significantly improved through the coupling of the core/shell CdTe/Mn-CdS quantum dots (QDs) with ZnO NS, and the introduction of the ZnS layer as a potential barrier. The photocurrent density systematically increases from ZnO NS (0.45 mA/cm(2)), CdTe/Mn-CdS/ZnO NS (4.98 mA/cm(2)), to ZnS/CdTe/Mn-CdS/ZnS/ZnO (6.23 mA/cm(2)) under the irradiation of AM 1.5G simulated sunlight. More important, the ZnS/CdTe/Mn-CdS/ZnS-sensitized ZnO NS photoelectrode provides a remarkable photoelectrochernical cell efficiency of 4.20% at -0.39 V vs Ag/AgCl.
引用
收藏
页码:12353 / 12362
页数:10
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