Two-Dimensional Carrier Distribution in Top-Gate Polymer Field-Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy

被引：155

作者：

Kronemeijer, Auke J. ^{[1
]}

Pecunia, Vincenzo ^{[1
]}

Venkateshvaran, Deepak ^{[1
]}

Nikolka, Mark ^{[1
]}

Sadhanala, Aditya ^{[1
]}

Moriarty, John ^{[1
]}

Szumilo, Monika ^{[1
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

ORGANIC TRANSISTORS; MOBILITY; SEMICONDUCTOR; THICKNESS;

D O I：

10.1002/adma.201303060

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.

引用

页码：728 / 733

页数：6

共 10 条

[1] Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
Noh, Yong-Young
Sirringhaus, Henning
ORGANIC ELECTRONICS, 2009, 10 (01) : 174 - 180
[2] Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors
Jung, Ukjin
Kim, Yun Ji
Kim, Yonghun
Lee, Young Gon
Lee, Byoung Hun
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) : 408 - 410
[3] Top-gate Organic Field-effect Transistors Fabricated on Shape-memory Polymer Substrates
Choi, Sangmoo
Fuentes-Hernandez, Canek
Wang, Cheng-Yin
Wei, Andrew
Voit, Walter
Zhang, Yadong
Barlow, Stephen
Marder, Seth R.
Kippelen, Bernard
ORGANIC FIELD-EFFECT TRANSISTORS XIV; AND ORGANIC SENSORS AND BIOELECTRONICS VIII, 2015, 9568
[4] Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors
Choi, Junhwan
Yoo, Hocheon
POLYMERS, 2023, 15 (06)
[5] Novel electrodes and gate dielectrics for field-effect transistors based on two-dimensional materials
Song, Intek
BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2023, 44 (06) : 495 - 506
[6] High-performance and electrically stable solution-processed polymer field-effect transistors with a top-gate configuration
Takagi, Kenichiro
Nagase, Takashi
Kobayashi, Takashi
Kushida, Takashi
Naito, Hiroyoshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (01) : 011601
[7] Two-dimensional charge transport in molecularly ordered polymer field-effect transistors
D'Innocenzo, V.
Luzio, A.
Abdalla, H.
Fabiano, S.
Loi, M. A.
Natali, D.
Petrozza, A.
Kemerink, M.
Caironi, M.
JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (47) : 11135 - 11142
[8] Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy
Choi, Kyunghee
Raza, Syed Ali Raza
Lee, Hee Sung
Jeon, Pyo Jin
Pezeshki, Atiye
Min, Sung-Wook
Kim, Jin Sung
Yoon, Woojin
Ju, Sang-Yong
Leec, Kimoon
Im, Seongil
NANOSCALE, 2015, 7 (13) : 5617 - 5623
[9] Two-dimensional organic-inorganic hybrid perovskite field-effect transistors with polymers as bottom-gate dielectrics
Zhang, Fan
Zhang, Huaye
Zhu, Lijie
Qin, Liang
Wang, Yue
Hu, Yufeng
Lou, Zhidong
Hou, Yanbing
Teng, Feng
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (14) : 4004 - 4012
[10] Influence of Quantum Capacitance on Charge Carrier Density Estimation in a Nanoscale Field-Effect Transistor with a Channel Based on a Monolayer WSe2 Two-Dimensional Crystal Semiconductor
Bera, M. K.
Kharb, R.
Sharma, N.
Sharma, A. K.
Sehrawat, R.
Pandey, S. P.
Mittal, R.
Tyagi, D. K.
JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (06) : 3504 - 3513

← 1 →