Synthesis of location-dependent phosphorus-doped ZnO nanostructures on the porous alumina membranes

被引:7
作者
Hu, Dazhi [1 ]
Fan, Donghua [2 ]
Zhu, Yufu [3 ]
Wang, Wei [4 ]
Pan, Fengming [1 ]
Wu, Ping [1 ]
Fan, Jiyu [1 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Coll Sci, Nanjing 210016, Jiangsu, Peoples R China
[2] Wuyi Univ, Sch Appl Phys & Mat, Jiangmen 529020, Peoples R China
[3] Huaiyin Inst Technol, Fac Mech Engn, Huaian 223003, Peoples R China
[4] Shaanxi Aircraft Ind Grp Co Ltd, Qual Management Dept, Hanzhong 723213, Peoples R China
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 04期
关键词
electron microscopy; Raman spectroscopy; semiconductors; thermal evaporation; MOLECULAR-BEAM EPITAXY; ZINC-OXIDE; OPTICAL-PROPERTIES; NANOWIRE ARRAYS; INP SUBSTRATE; PHOTOLUMINESCENCE; FILMS; GROWTH; SB;
D O I
10.1002/pssa.201330159
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phosphorus-doped ZnO nanostructures are synthesized on porous alumina membranes by evaporating the mixture of pure Zn, carbon, and P2O5 powder. The influences of growth area on phosphorus-doped ZnO nanostructures are studied in detail. The Raman spectra indicate that phosphorus enters into the ZnO crystal lattice to easily form a Zn-P bond and/or a P-Zn-O one by occupying an O site and a Zn one. The further analyses for Raman spectra and SEM results display that the change of nanorods morphology should mainly be attributed to the relaxation of lattice strain caused by P occupying Zn sites. Compared with the morphology of samples on Si substrate, it is found that alumina membranes are helpful to the growth of nanostructures due to the existence of localized negative charges. The growth mechanism of different nanostructures is also discussed. The present research results are helpful to realize the preparation of phosphorus-doped ZnO nanostructures with controllable morphologies.
引用
收藏
页码:856 / 861
页数:6
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