Light emission from planar-type ZnO p-n junction fabricated by PLD

被引：1

作者：

Kusumori, Takeshi ^{[1
]}

Nakao, Setsuo ^{[1
]}

Yoshimura, Kazuki ^{[1
]}

机构：

[1] AIST, MRISUS, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 10 | 2013年 / 10卷 / 10期

关键词：

p-type ZnO; pulsed-laser deposition epitaxy; LED; ZINC-OXIDE; FILMS;

D O I：

10.1002/pssc.201200946

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zinc oxide (ZnO) is a promising wide band-gap semiconductor for optoelectronic devices such as high-brightness (HB) light-emitting-diode (LEDs) in illumination applications. A significant difficulty has been the preparation of p-type ZnO, which is indispensable for ZnO LEDs. We have prepared reproducible p-type zinc oxide films by pulsed-laser deposition (PLD) and a subsequent thermal annealing treatment. The Hall effect, with a Hall bar configuration, was measured in order to determine the conduction type of the films. The gradient of applied magnetic field vs. Hall voltage clearly implies the successful realization of p-type ZnO films. After the confirmation of p-type conductivity, the films were patterned again to prepare the planar-type p-n junction. Emission of visible light with bluish white color was observed when electrical current was injected through the junction. The spectra of the light indicate the emission start neat the band edge of ZnO. [GRAPHICS] Spectra of light emission from planar-type ZnO p-n junction. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1261 / 1264

页数：4

共 12 条

[1]

[Anonymous], 2002, SEMICONDUCTOR DEVICE

[2] Uniaxial locked epitaxy of ZnO on the a face of sapphire [J].

Fons, P ;

Iwata, K ;

Yamada, A ;

Matsubara, K ;

Niki, S ;

Nakahara, K ;

Tanabe, T ;

Takasu, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1801-1803

[3] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].

Kim, KK ;

Kim, HS ;

Hwang, DK ;

Lim, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65

[4] Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic -: art. no. 262105 [J].

Krtschil, A ;

Dadgar, A ;

Oleynik, N ;

Bläsing, J ;

Diez, A ;

Krost, A .

APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3

[5] Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition [J].

Kusumori, T ;

Muto, H ;

Brito, ME .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1272-1274

[6] P-type doping and devices based on ZnO [J].

Look, DC ;

Claftin, B .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :624-630

[7] Preparation and characterization of Zn18O/Zn16O isotope heterostructure thin films [J].

Matsumoto, Kenji ;

Adachi, Yutaka ;

Sakaguchi, Isao ;

Ohashi, Naoki ;

Haneda, Hajime .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2010, 30 (02) :423-428

[8] Trap-related photoconductivity in ZnO epilayers [J].

Murphy, TE ;

Moazzami, K ;

Phillips, JD .

JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) :543-549

[9] Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals [J].

Ohgaki, Takeshi ;

Ohashi, Naoki ;

Sugimura, Shigeaki ;

Ryoken, Haruki ;

Sakaguchi, Isao ;

Adachi, Yutaka ;

Haneda, Hajime .

JOURNAL OF MATERIALS RESEARCH, 2008, 23 (09) :2293-2295

[10]

Park CH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073202

← 1 2 →