Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates

被引：20

作者：

Dais, C. ^{[1
]}

Mussler, G. ^{[2
]}

Sigg, H. ^{[1
]}

Mueller, E. ^{[1
,3
]}

Solak, H. H. ^{[1
,4
]}

Gruetzmacher, D. ^{[2
]}

机构：

[1] Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland

[2] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[3] ETH, EMEZ, CH-8093 Zurich, Switzerland

[4] EULITHA AG, CH-5232 Villigen, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 12期

关键词：

ASSEMBLED GE ISLANDS; PHOTOLUMINESCENCE; SI(001);

D O I：

10.1063/1.3117230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe quantum dots are proposed as building blocks for future Si device technology. However, in order to exploit the full potential of SiGe islands, it is necessary to control their positioning and size on a nanometer length. This is achieved by templated self-assembly, which combines substrate patterning and subsequent epitaxy. In this paper we report on the evolution of SiGe islands on patterned substrates under consideration of small template variations and postgrowth annealing. The impact of the structural variations on the optical properties of the islands is investigated by photoluminescence measurements. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117230]

引用

页数：4

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