A low-temperature wafer bonding technique using patternable materials

被引：110

作者：

Pan, CT ^{[1
]}

Yang, H

Shen, SC

Chou, MC

Chou, HP

机构：

[1] MIRL ITRI, MEMS Res Div, Hsinchu 310, Taiwan

[2] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2002年 / 12卷 / 05期

关键词：

D O I：

10.1088/0960-1317/12/5/315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm(-2) (20.6 MPa), and a spatial resolution of 10 mum, at a layer thickness of up to 100 mum. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

引用

页码：611 / 615

页数：5

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