A self-trapped hole in Cs2AgI3

被引:0
作者
Awano, T [1 ]
Matsuyama, T [1 ]
机构
[1] KYOTO UNIV,INST RES REACTOR,KUMATORI,OSAKA 59004,JAPAN
来源
PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96 | 1997年 / 239-卷
关键词
alkali silver halide; self-trapped hole; one center; energy band structure;
D O I
10.4028/www.scientific.net/MSF.239-241.175
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
gamma-ray irradiation induced a self-trapped hole only of the form of I-2(-) in Cs2AgI3 in contrast to other alkali silver iodides, in which I-0 is stable, or ammonium silver halides and alkali-ammonium silver iodides, in which both of (halogen)(2)(-) and (halogen)(0) are stable. Electronic band structure in fundamental absorption region of Cs2AgI3 was the same as those of other alkali silver iodides. Therefore the structure of the self-trapped hole in Cs2AgI3 is due to not only the electronic band structure but also another factor.
引用
收藏
页码:175 / 178
页数:4
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