Effect of Sb substitution on the topological surface states in Bi2Se3 single crystals: a magneto-transport study

被引：11

作者：

Devidas, T. R. ^{[1
]}

Amaladass, E. P. ^{[1
]}

Sharma, Shilpam ^{[1
]}

Mani, Awadhesh ^{[1
]}

Rajaraman, R. ^{[1
]}

Sundar, C. S. ^{[1
]}

Bharathi, A. ^{[2
]}

机构：

[1] IGCAR, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

[2] UGC DAE Consortium Sci Res, Kokilamedu 603104, Tamil Nadu, India

来源：

MATERIALS RESEARCH EXPRESS | 2017年 / 4卷 / 02期

关键词：

topological insulators; magneto-transport; Shubnikov de Haas oscillations; band bending; SHUBNIKOV-DE-HAAS; DIRAC CONE; PROGRAM;

D O I：

10.1088/2053-1591/4/2/026101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magneto-transport measurements have been carried out on Bi2-xSbxSe3 (x = 0, 0.05, 0.1, 0.3, 0.5) single crystals at 4.2 K temperature in the magnetic field range of -15 T to 15 T. Shubnikov-de Haas (SdH) oscillations of 2D nature were observed in samples with Sb concentration upto x = 0.3. The analyses of SdH oscillations observed in magneto-resistance data using Lifshitz-Kosevich equation reveal a systematic decrease in the Fermi surface area with Sb substitution. The Berry phase obtained from the Landau level fan diagram suggests the occurrence of 2D oscillations arising from a topological surface state (TSS) for Sb concentrations of x = 0, 0.05 and 0.1; while 2D oscillation seen at higher Sb concentration is attributed to surface 2D electron gas consequent to downward band bending.

引用

页数：8

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