Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

被引：11
作者：
Sogabe, Tomah [1 ]
Kaizu, Toshiyuki [1 ]
Okada, Yoshitaka [1 ]
Tomic, Stanko [2 ]
机构：
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
[2] Univ Salford, Sch Comp Sci & Engn, Joule Phys Lab, Manchester M5 4WT, Lancs, England
来源：
JOURNAL OF RENEWABLE AND SUSTAINABLE ENERGY | 2014年 / 6卷 / 01期
关键词：
OPTICAL GAIN; EFFICIENCY; LASERS; STRAIN;
D O I：
10.1063/1.4828359
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth. In this work, we performed theoretical simulations on a GaAs/AlGaAs quantum well, GaAs QD and QD array based intermediated band solar cell (IBSC) using a combined multiband k - p and drift-diffusion transportation method. The electronic structure, IB band dispersion, and optical transitions, including absorption and spontaneous emission among the valence band, intermediate band, and conduction band, were calculated. Based on these results, maximum conversion efficiency of GaAs/AlGaAs QD array based IBSC devices were calculated by a drift-diffusion model adapted to IBSC under the radiative recombination limit. (C) 2013 AIP Publishing LLC.
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页数：11
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