Electron escape from InAs quantum dots

被引：166
|
作者：
Kapteyn, CMA
Heinrichsdorff, F
Stier, O
Heitz, R
Grundmann, M
Zakharov, ND
Bimberg, D
Werner, P
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.60.14265
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We identify fundamental mechanisms of electron escape from self-organized InAs quantum dots (QD's) in a vertical electric field by time-resolved capacitance spectroscopy. Direct tunneling and a thermally activated escape process are observed. The QD electron ground and first-excited states are concluded to be located similar to 190 and similar to 96 meV below the GaAs matrix conduction band, respectively. Our experimental results and their interpretation are in good agreement with eight-band k.p calculations and demonstrate the importance of tunnel processes. [S0163-1829(99)01344-2].
引用
收藏
页码：14265 / 14268
页数：4
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